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? february 2001 1/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 omnifet ii: fully autoprotected power mosfet 1 n linear current limitation n thermal shut down n short circuit protection n integrated clamp n low current drawn from input pin n diagnostic feedback through input pin n esd protection n direct access to the gate of the power mosfet (analog driving) n compatible with standard power mosfet description the VNB35NV04, vnp35nv04, vnv35nv04, vnw35nv04 are monolithic devices designed in stmicroelectronics vipower m0-3 technology, intended for replacement of standard power mosfets from dc up to 25khz applications. built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. fault feedback can be detected by monitoring the voltage at the input pin. type r ds(on) i lim v clamp VNB35NV04 vnp35nv04 vnv35nv04 vnw35nv04 10 m w 30 a 40 v d 2 pak powerso-10 ? to-220 1 10 1 2 3 1 3 order codes: d 2 pak VNB35NV04 to-220 vnp35nv04 powerso-10 ? vnv35nv04 preliminary data block diagram overvoltage gate linear drain source clamp 1 2 3 current limiter control over temperature input fc01000 to-247 vnw35nv04 1 2 3 to-247
2/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 absolute maximum rating connection diagram (top view) symbol parameter value unit powerso-10 ? d 2 pak to-220 to-247 v ds drain-source voltage (v in =0v) internally clamped v v in input voltage internally clamped v i in input current +/-20 ma r in min minimum input series impedance 4.7 w i d drain current internally limited a i r reverse dc output current -30 a v esd1 electrostatic discharge (r=1.5k w , c=100pf) 4000 v v esd2 electrostatic discharge on output pin only (r=330 w , c=150pf) 16500 v p tot total dissipation at t c =25c 125 125 125 208 w t j operating junction temperature internally limited c t c case operating temperature internally limited c t stg storage temperature -55 to 150 c 1 current and voltage conventions (*) for the pins configuration related to to-220, to-247, d 2 pak, see outlines at page 1. 1 2 3 4 5 6 7 8 9 10 11 source source n.c. source source input input input input input drain drain input source i d i in v in v ds r in
3/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 thermal data (*) when mounted on a standard single-sided fr4 board with 50mm 2 of cu (at least 35 m m thick) connected to all drain pins. electrical characteristics (-40c < t j < 150c, unless otherwise specified) off on symbol parameter value unit powerso-10 ? d2pak to-220 to-247 r thj-case thermal resistance junction-case }}} max 1 1 1 0.6 c/w r thj-amb thermal resistance junction-ambient max 50(*) 50(*) 50 30 c/w symbol parameter test conditions min typ max unit v clamp drain-source clamp voltage v in =0v; i d =15a 40 45 55 v v clth drain-source clamp threshold voltage v in =0v; i d =2ma 36 v v inth input threshold voltage v ds =v in ; i d =1ma 0.5 2.5 v i iss supply current from input pin v ds =0v; v in =5v 100 150 m a v incl input-source clamp voltage i in =1ma i in =-1ma 6 -1.0 6.8 8 -0.3 v i dss zero input voltage drain current (v in =0v) v ds =13v; v in =0v; t j =25c v ds =25v; v in =0v 30 75 m a symbol parameter test conditions min typ max unit r ds(on) static drain-source on resistance v in =5v; i d =15a; t j = 25c v in =5v; i d =15a 10 20 m w 1
4/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 electrical characteristics (continued) (t j =25c, unless otherwise specified) dynamic switching source drain diode protections (-40c < t j < 150c, unless otherwise specified) (*) pulsed: pulse duration = 300 m s, duty cycle 1.5% symbol parameter test conditions min typ max unit g fs (*) forward transconductance v dd =13v; i d =15a 35 s c oss output capacitance v ds =13v; f=1mhz; v in =0v 1300 pf symbol parameter test conditions min typ max unit t d(on) turn-on delay time v dd =15v; i d =15a v gen =5v; r gen =r in min =4.7 w (see figure 1) 150 500 ns t r rise time 750 2500 ns t d(off) turn-off delay time 900 3000 ns t f fall time 500 1500 ns t d(on) turn-on delay time v dd =15v; i d =15a v gen =5v; r gen =2.2k w (see figure 1) 412 m s t r rise time 32 100 m s t d(off) turn-off delay time 50 150 m s t f fall time 40 120 m s (di/dt) on turn-on current slope v dd =15v; i d =15a v gen =5v; r gen =r in min =4.7 w 18 a/ m s q i total input charge v dd =12v; i d =15a; v in =5v i gen =2.13ma (see figure 5) 60 nc symbol parameter test conditions min typ max unit v sd (*) forward on voltage i sd =15a; v in =0v 0.8 v t rr reverse recovery time i sd =15a; di/dt=100a/ m s v dd =30v; l=200 m h (see test circuit, figure 2) 400 ns q rr reverse recovery charge 1.4 m c i rrm reverse recovery current 7 a symbol parameter test conditions min typ max unit i lim drain current limit v in =6v; v ds =13v 30 45 60 a t dlim step response current limit v in =6v; v ds =13v 50 m s t jsh overtemperature shutdown 150 175 c t jrs overtemperature reset 135 c i gf fault sink current v in =5v; v ds =13v; t j =t jsh 10 15 20 ma e as single pulse avalanche energy starting t j =25c; v dd =24v v in =5v; r gen =r in min =4.7 w; l=24mh (see figures 3 & 4) 1.7 j 2
5/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 protection features during normal operation, the input pin is electrically connected to the gate of the internal power mosfet through a low impedance path. the device then behaves like a standard power mosfet and can be used as a switch from dc up to 25 khz. the only difference from the users standpoint is that a small dc current i iss (typ. 100 m a) flows into the input pin in order to supply the internal circuitry. the device integrates: - overvoltage clamp protection: internally set at 45v, along with the rugged avalanche characteristics of the power mosfet stage give this device unrivalled ruggedness and energy handling capability. this feature is mainly important when driving inductive loads. - linear current limiter circuit: limits the drain current i d to i lim whatever the input pin voltages is. when the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold t jsh . - overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. the location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. overtemperature cutout occurs in the range 150 to 190 c, a typical value being 170 c. the device is automatically restarted when the chip temperature falls of about 15c below shut-down temperature. - status feedback: in the case of an overtemperature fault condition (t j > t jsh ), the device tries to sink a diagnostic current i gf through the input pin in order to indicate fault condition. if driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. if the drive impedance is high enough so that the input pin driver is not able to supply the current i gf , the input pin will fall to 0v. this will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current i iss . additional features of this device are esd protection according to the human body model and the ability to be driven from a ttl logic circuit. 1
6/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 1 fig.2: test circuit for diode recovery times l=100uh a b 8.5 w v dd r gen fast diode omnifet a d i s 25 w b omnifet d s i v gen fig.1: switching time test circuit for resistive load r gen v gen v d t i d 90% 10% t v gen t d(on) t d(off) t f t r
7/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 gen nd8003 v in fig. 3: unclamped inductive load test circuits fig. 5: input charge test circuit fig. 4: unclamped inductive waveforms r gen p w v in fig 6 : thermal impedance for to-220 fig. 7: thermal impedance for to-247
8/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 1 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 m 2.6 0.102 dia. 3.75 3.85 0.147 0.151 to-220 mechanical data & k c * 8 ( ( ( ) ) * 8 . . . . . % . ' . # & /
9/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 1 1 1 dim. mm. inch min. typ max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia. 3.55 3.65 0.140 0.144 to-247 mechanical data
10/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 1 1 1 dim. mm. inch min. typ max. min. typ. max. a 3.35 3.65 0.132 0.144 a (*) 3.4 3.6 0.134 0.142 a1 0.00 0.10 0.000 0.004 b 0.40 0.60 0.016 0.024 b (*) 0.37 0.53 0.014 0.021 c 0.35 0.55 0.013 0.022 c (*) 0.23 0.32 0.009 0.0126 d 9.40 9.60 0.370 0.378 d1 7.40 7.60 0.291 0.300 e 9.30 9.50 0.366 0.374 e2 7.20 7.60 0.283 300 e2 (*) 7.30 7.50 0.287 0.295 e4 5.90 6.10 0.232 0.240 e4 (*) 5.90 6.30 0.232 0.248 e 1.27 0.050 f 1.25 1.35 0.049 0.053 f (*) 1.20 1.40 0.047 0.055 h 13.80 14.40 0.543 0.567 h (*) 13.85 14.35 0.545 0.565 h 0.50 0.002 l 1.20 1.80 0.047 0.070 l (*) 0.80 1.10 0.031 0.043 a 0o 8o 0o 8o a (*) 2o 8o 2o 8o 1 1 powerso-10 ? mechanical data (*) muar only poa p013p detail "a" plane seating a l a1 f a1 h a d d1 = = = = e4 0.10 a e c a b b detail "a" seating plane e2 10 1 eb he 0.25 p095a
11/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b1 0.8 1.3 0.031 0.051 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o d 2 pak mechanical data 7106164
12/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 1 to-220 tube shipment (no suffix) all dimensions are in mm. base q.ty 50 bulk q.ty 1000 tube length ( 0.5) 532 a 5.5 b 31.4 c ( 0.1) 0.75 a b c
13/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 1 powerso-10 ? suggested pad layout 1 tape and reel shipment (suffix 13tr) reel dimensions all dimensions are in mm. base q.ty 600 bulk q.ty 600 a (max) 330 b (min) 1.5 c ( 0.2) 13 f 20.2 g (+ 2 / -0) 24.4 n (min) 60 t (max) 30.4 tape dimensions according to electronic industries association (eia) standard 481 rev. a, feb 1986 all dimensions are in mm. tape width w 24 tape hole spacing p0 ( 0.1) 4 component spacing p 24 hole diameter d ( 0.1/-0) 1.5 hole diameter d1 (min) 1.5 hole position f ( 0.05) 11.5 compartment depth k (max) 6.5 hole spacing p1 ( 0.1) 2 top cover tape end start no components no components components 500mm min 500mm min empty components pockets saled with cover tape. user direction of feed 6.30 10.8 - 11 14.6 - 14.9 9.5 1 2 3 4 5 1.27 0.67 - 0.73 0. 54 - 0.6 10 9 8 7 6 b a c all dimensions are in mm. base q.ty bulk q.ty tube length ( 0.5) a b c ( 0.1) casablanca 50 1000 532 10.4 16.4 0.8 muar 50 1000 532 4.9 17.2 0.8 tube shipment (no suffix) c a b muar casablanca
14/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 d 2 pak footprint tube shipment (no suffix) a c b all dimensions are in mm. base q.ty 50 bulk q.ty 500 tube length ( 0.5) 532 a 6 b 21.3 c ( 0.1) 0.6 tape and reel shipment (suffix 13tr) reel dimensions all dimensions are in mm. base q.ty 1000 bulk q.ty 1000 a (max) 330 b (min) 1.5 c ( 0.2) 13 f 20.2 g (+ 2 / -0) 24.4 n (min) 60 t (max) 30.4 tape dimensions according to electronic industries association (eia) standard 481 rev. a, feb 1986 all dimensions are in mm. tape width w 24 tape hole spacing p0 ( 0.1) 4 component spacing p 16 hole diameter d ( 0.1/-0) 1.5 hole diameter d1 (min) 1.5 hole position f ( 0.05) 11.5 compartment depth k (max) 6.5 hole spacing p1 ( 0.1) 2 top cover tape end start no components no components components 500mm min 500mm min empty components pockets saled with cover tape. user direction of feed 12.20 5.08 1.60 3.50 16.90 9.75 all dimensions are in millimeters
15/15 VNB35NV04 / vnp35nv04 / vnv35nv04 / vnw35nv04 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this p ublication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy- all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com

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